• 专利标题:   Growing vertical graphene comprises placing substrate in reaction chamber, introducing carbon source and vertical electric field, and performing vapor deposition reaction on substrate surface to grow vertical graphene.
  • 专利号:   CN110950329-A
  • 发明人:   ZHANG J, XU S, SUN Y, GAO Z, LUO J
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN110950329-A 03 Apr 2020 C01B-032/186 202033 Pages: 16 Chinese
  • 申请详细信息:   CN110950329-A CN11171480 26 Nov 2019
  • 优先权号:   CN11171480

▎ 摘  要

NOVELTY - Growing vertical graphene comprises placing substrate in reaction chamber, introducing carbon source and vertical electric field in reaction chamber, and performing vapor deposition reaction on substrate surface to grow vertical graphene. USE - The method is useful for growing vertical graphene. ADVANTAGE - The method is simple, and realizes rapid growth of vertical graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the vertical graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the vertical graphene.