• 专利标题:   Growing of graphene sensor matrix in situ on cemented carbide involves depositing amorphous silicon carbide film on surface of cemented carbide, and growing graphene sensor matrix in situ in cemented carbide surface.
  • 专利号:   CN107365959-A, CN107365959-B
  • 发明人:   LIU F, REN Y, YU X, ZHANG Z
  • 专利权人:   UNIV CHINA GEOSCIENCES BEIJING
  • 国际专利分类:   C23C014/06, C23C014/35, C23C014/58
  • 专利详细信息:   CN107365959-A 21 Nov 2017 C23C-014/06 201801 Pages: 12 Chinese
  • 申请详细信息:   CN107365959-A CN10445413 14 Jun 2017
  • 优先权号:   CN10445413

▎ 摘  要

NOVELTY - Growing of graphene sensor matrix in situ on cemented carbide comprises adopting medium frequency magnetron sputtering to deposit amorphous silicon carbide film on surface of cemented carbide; and performing vacuum annealing to grow graphene sensor matrix required for space drilling in situ in cemented carbide surface. USE - Growing of graphene sensor matrix in situ on cemented carbide. ADVANTAGE - The method is capable of space drilling on cemented carbide surface and overcomes defect of existing sensor with low sensitivity, has short service life and can be easily attenuated.