▎ 摘　　要

NOVELTY - A nonvolatile memory device comprises a substrate (100), a first electrode (200) positioned on the substrate, a dielectric material layer (300) which is positioned on the first electrode, where the resistance and capacitance are changed by tunneling conductance of an electric charge following an applied voltage, which has rectification characteristics, and comprises a dielectric material, an active layer (400) positioned on the dielectric material layer, comprising a graphene oxide composite material, where resistance and a capacitance change occur according to an applied voltage, and a second electrode (500) positioned on the active layer. where the nonvolatile memory device has multiple levels of resistance and capacitance values depending on the applied voltage. USE - Nonvolatile memory device. ADVANTAGE - The device has multi-level resistance and capacitance memory characteristics, and self-rectifying characteristic. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing nonvolatile memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of nonvolatile memory device. Substrate (100) First electrode (200) Dielectric layer (300) Active layer (400) Second electrode (500)