▎ 摘　　要

NOVELTY - P-type transparent conductor with a highly reduced graphene oxide thin film, comprises: a substrate; and a highly reduced graphene oxide thin film deposited on the substrate, where the reduced graphene oxide thin film is directly grown on the substrate by pulsed laser deposition in a reduced atmosphere. The substrate comprises silica/silicon and/or fused silica. USE - Used as P-type transparent conductor with a highly reduced graphene oxide thin film. ADVANTAGE - The conductor: is synthesized by direct growth of large-area wafer-scale highly reduced graphene oxide thin films in a single step pulsed laser deposition process, where the direct growth of large-area wafer-scale measures at least 4-inch diameter and the highly reduced graphene oxide thin film exhibits a transmittance value of ~98% at 550 nm and an electrical conductivity of ~7000 S/m (ρ is 0.014 Ω -cm); and has higher of the specification2contents leading to the reduction of resistivity (and sheet resistance) of the film and shows very high transmittance value. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for synthesis of p-type transparent conductor with reduced graphene oxide thin films. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of atomic force microscopy image of the highly reduced graphene oxide thin film grown on silica/silicon substrate for evaluating the thickness of the film.