• 专利标题:   Manufacture of graphene involves forming laminate structure comprising metal thin film and carbon-dissolved silicon thin film and then thermal-treating structure.
  • 专利号:   KR2011064162-A, KR1156355-B1
  • 发明人:   KIM K B, KIM H M
  • 专利权人:   SNU R DB FOUND
  • 国际专利分类:   B32B009/00, C01B031/04
  • 专利详细信息:   KR2011064162-A 15 Jun 2011 201240 Pages: 10
  • 申请详细信息:   KR2011064162-A KR120648 07 Dec 2009
  • 优先权号:   KR120648

▎ 摘  要

NOVELTY - A laminate structure (a) comprising a metal thin film and carbon-dissolved silicon thin film is formed and then thermal-treated, to form laminate structure (b) comprising a graphene layer (I), a metal silicide thin film, and graphene layer (II) on a substrate. Then, metal silicide thin film and graphene layer (II) are removed, to from graphene structure. USE - Manufacture of graphene. ADVANTAGE - The method efficiently and economically provides.