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  • 专利标题:   Graphene integrated circuit for lateral type giant-magneto-resistance device and semiconductor, has non-linear element containing graphene formed in silicon surface of silicon-carbide substrate.
  • 专利号:   JP2007335532-A, JP5167479-B2
  • 发明人:   MINAMI K, YO K
  • 专利权人:   UNIV HOKKAIDO
  • 国际专利分类:   H01L021/8234, H01L027/088, H01L029/06, H01L029/78, H01L029/82, H01L043/08, H01L021/336
  • 专利详细信息:   JP2007335532-A 27 Dec 2007 H01L-029/06 200807 Pages: 8 Japanese
  • 申请详细信息:   JP2007335532-A JP163856 13 Jun 2006
  • 优先权号:   JP163856

▎ 摘　　要

NOVELTY - The graphene integrated circuit has a non-linear element containing graphene formed in the silicon surface of a silicon-carbide substrate. USE - For lateral type giant-magneto-resistance device (claimed), and semiconductor. ADVANTAGE - The graphene integrated circuit provides improved integration degree. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of graphene integrated circuit. DESCRIPTION OF DRAWING(S) - The figure shows manufacturing process of graphene integrated circuit. Insulating film (2) Ohmic electrode (4) Gate electrode (6) Metal wiring (7)