▎ 摘　　要

NOVELTY - Forming silicon carbide coating layer by chemical vapor reaction process, comprises (a) placing metallic silicon powder on the bottom of a chamber; (b) positioning a carbon-containing material in the chamber so as not to come into contact with the metallic silicon powder; and (c) raising the temperature inside the chamber to 2000-2500 degrees C, and maintaining the elevated temperature. The carbon-containing material includes graphite, graphene, carbon fiber, carbon nanotubes, carbon nanorod, reduced graphene oxide and/or carbon black. USE - The method is useful for forming silicon carbide coating layer by chemical vapor reaction process. ADVANTAGE - The method increases production efficiency of the coating layer, improves uniformity of coating layer to suppress deterioration of physical properties, and is simple.