▎ 摘　　要

NOVELTY - The thin film transistor has a gate electrode, in which a gate insulating layer is put in the interval and is provided in opposite directions to a channel layer. The channel layer has a laminating structure of an oxide layer, where a graphene layer is provided between a source electrode and a drain electrode. USE - Thin film transistor. ADVANTAGE - The channel layer has a laminating structure of an oxide layer, where a graphene layer is provided between a source electrode and a drain electrode, and hence ensures increasing the charge mobility without reducing the transparency of the thin film transistor, as well as ensures simple manufacturing of the thin film transistor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method for a thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of charge mobility of a thin film transistor.