▎ 摘　　要

NOVELTY - Graphene oxide memristor based on laminated structure comprises a first graphene oxide layer arranged on one side surface of a conductive base layer. A pyridine salt thin film layer, disposed on the surface of the first graphene oxide layer opposite to the conductive base layer. A second graphene oxide layer is disposed on the surface of the side opposite to the first graphene oxide layer on the pyridine salt thin film layer. A metal electrode layer is disposed on the surface of the second graphene oxide layer opposite to the pyridine salt thin film layer. USE - Graphene oxide memristor based on laminated structure used for artificial synapse and nerve calculation. Can also be used for construction of integrated computer which can break through traditional von-Noeman computer architecture. ADVANTAGE - By inserting pyridine salt film in the graphene oxide functional layer as buffer layer, capable of effectively inhibiting random migration of metal ion in the functional layer and random growth of conductive filament, so as to improve the stability of the memristor bidirectional modulation, successfully realizing the simulation of the biological synapse. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of graphene oxide memristor based on laminated structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the molecular structure of graphene oxide (upper left) and a pyridinium salt (lower left) of the graphene oxide memristor based on laminated structure and a schematic diagram of a stacked memristor (right) (Drawing includes non-English language text).