▎ 摘　　要

NOVELTY - The sensor has a ferroelectric material layer arranged on a light outlet side of an infrared absorption layer. A graphene transistor is connected with the ferroelectric material layer and provided two electrodes. Two end parts of the electrodes are respectively arranged on the light outlet side of the ferroelectric material layer. A graphene material layer is arranged on the light-outlet side of the ferroelectric material layer. An initializing electrode is arranged on a light incidence side of the ferroelectric material layer. A position of the first or second electrode is fixed with the ferroelectric material layer. The ferroelectric material layer is made of lead zirconate titanate piezoelectric ceramic material or barium strontium titanate material. USE - Infrared sensor for an infrared sensing signal amplification circuit (claimed). ADVANTAGE - The sensor can change size of current after infrared radiation, and can enhance signal sensitivity of an infrared sensing signal amplifying circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an infrared sensor.