▎ 摘　　要

NOVELTY - A wafer comprises a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, where the barrier layer is an alumina and/or hafnium oxide layer, has a constant thickness or less and provides a growth surface for the CVD growth of uniform graphene. USE - Wafer for CVD growth of uniform graphene at temperature in excess of 700°C. ADVANTAGE - The wafer overcomes, or at least substantially reduces, the various problems associated with the prior art or at least provides a commercially useful alternative. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. laminate, which comprises the wafer and a graphene layer formed on the growth surface of the barrier layer by CVD at a temperature in excess of 700°C; 2. an electronic device, which comprises the laminate; 3. a method for the manufacturing wafer for the CVD growth of uniform graphene at a temperature in excess of 700°C, which involves: a. providing a planar silicon substrate having an insulating layer provided across a surface, b. forming a barrier layer across the insulating layer by ALD using water or ozone as a precursor, where the barrier layer is an alumina and/or hafnium oxide layer, has a constant thickness of 20 nm or less and provides a growth surface for the CVD growth of uniform graphene at a temperature in excess of 700°C; 4. a method for the manufacturing of a laminate, which involves: a. providing the wafer, b. and forming a graphene layer on the growth surface of the barrier layer by CVD at a temperature in excess of 700°C.