▎ 摘　　要

NOVELTY - The method involves soaking the poly methyl methacrylate/graphene film etched from the growth substrate in a form-amide solution to enhance the hydro-philicity of the graphene film. The PMMA/graphene is picked up with the target substrate to form PMMA/graphene/target substrate sandwich structure, and processed at a suitable temperature to remove moisture. The PMMA/graphene/target substrate is soaked in acetone solution to remove PMMA. The PMMA photo-resist remaining on the graphene during the transfer process is removed by annealing in a low-pressure and low-temperature atmosphere. The PMMA/graphene film is soaked in the form-amide solution for 5-30min to improve the hydro-philicity of the graphene surface. The high-purity inert gas is argon, nitrogen, helium, the flow rate is 50-500sccm, and the time is 5-20min, so as to drive out the air in the chamber. The target substrate is slowly heated to 100-500 degree Celsius. USE - Method for improving graphene performance by wet soaking and low-temperature annealing. ADVANTAGE - The formation of wrinkles on the surface of the graphene can be avoided, the PMMA residues attached to the surface of the graphene can be efficiently removed, and the graphene film with perfect performance is obtained, so that the graphene material is widely applied to microelectronic components and sensors, and the electrical performance of the graphene film is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for improving graphene performance by wet soaking and low-temperature annealing. (Drawing includes non-English language text)