▎ 摘　　要

NOVELTY - The method involves placing a sapphire substrate in a magnetron sputtering system with predetermined reaction chamber pressure. The nitrogen and argon gas are introduced into the magnetron sputtering system to obtain a treated sapphire substrate. The magnetron sputtering aluminum nitride is applied on the treated sapphire substrate to obtain a magnetron sputtering aluminum nitride substrate. The heat treatment of the substrate is performed. The substrate covered with graphene is placed in a metal organic chemical vapor deposition reaction chamber. The pressure of the reaction chamber is adjusted. The high temperature gallium nitride is grown on the low temperature gallium nitride substrate by metal organic chemical vapor deposition method. The sample is taken out to obtain gallium nitride based on the graphene intercalation structure, after the temperature of the reaction chamber is lowered to room temperature. USE - Graphene insert layer structure based gallium nitride growing method. ADVANTAGE - High quality gallium nitride epitaxial layer is obtained under the premise of low process steps, low cost and at good process repeatability. DESCRIPTION OF DRAWING(S) - The drawing shows a block flow diagram illustrating the gallium nitride growing process. (Drawing includes non-English language text)