▎ 摘　　要

NOVELTY - The transistor (300A) has a dielectric layer (340) for separating a gate (125) from a channel (165). A conductive liner is provided with female portions that contact knobs of the channel, where the knobs are male portions that form female or male electrical connections with the female portions of the conductive liner. The gate is located on opposite sides of stacked channels. The knobs of the channel are doped differently from a middle portion of the channel, where thickness of the channel is less than 5 nm. USE - FET for an integrated circuit in a computer. ADVANTAGE - The transistor forms electrical connection between metal liners and sides of channels in easy manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming a FET for an integrated circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a FET for an integrated circuit in a computer. 125Gate 165Channel 300A,300BFETs 330Integrated structure 340Dielectric layer