▎ 摘　　要

NOVELTY - The method involves depositing a gate dielectric layer in the gate through hole and is set with a thickness of 10-50nm. The gate dielectric layer is a single-layer or multi-layer gate dielectric layer material. The graphene layer is etched at the edge of the active area of the device and connected with the backside of the device by the metal and the connection is sintered with the metal on the backplane and the heat sink after the internal cellular structure of the device is completed. USE - Method for preparing cellular structure of gallium nitride (GaN) high-electron-mobility transistor (HEMT) having graphene buried source and vertical gate (claimed). ADVANTAGE - The length of the gate-on channel is greatly reduced and the gate-on resistance of the device under the premise of cutting off the two-dimensional electron gas channel is lowered so that the device has a large on-off operation threshold voltage. The threshold voltage stability of the device is very good and device performance is very good when fabricated on a large area substrate. The off-type HEMT device has the characteristics of stable high threshold voltage and low on-resistance at the same time. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the GaN HEMT structure. (Drawing includes non-English language text)