▎ 摘　　要

NOVELTY - The structure has an intermediate layer (24) placed on a graphene layer that is formed from a linear type precursor. A material layer is placed on the intermediate layer and formed through atomic layer deposition. The intermediate layer includes a thickness in a range of about 0.1 nano meter to about 5 nano meter, where the material layer comprises a high-k material, graphene that constitutes the graphene layer is formed by a small number of carbon atoms that are connected in a covalent bond and forms a polycyclic aromatic molecule. USE - Stacking structure for use in an electronic device. ADVANTAGE - The structure improves surface flatness of the material layer, so that physical uniformity of the material layer is easily ensured. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for forming a material layer on a graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an electronic device including material layer formed on graphene layer. Substrate (20) Source electrode (21a) Drain electrode (21b) Channel layer (22) Intermediate layer (24) Gate insulating layer (26) Gate electrode (28)