▎ 摘　　要

NOVELTY - On-chip micro ionization vacuum sensor comprises micro electronic source on the chip (1), first insulating layer (2) orderly arranged on one side of the micro-electronic source on the chip, first collecting electrode (4), second insulating layer(6) and second collecting electrode (8). The one side of on-chipmicro-electronic source facing to the first insulating layer is provided with an electronic emitting structure. The first insulating layer has a first through hole (3). The first through hole passes through the first insulating layer. The first collecting electrode has a first mesh (5). The first mesh passes through the first collecting electrode. The second insulating layer has a second through hole (7). The second through hole passes through the second insulating layer. The second collecting electrode is provided with a second mesh. The second mesh passes through the second collecting electrode, the first through hole and the first mesh. USE - On-chip micro ionization vacuum sensor used for middle and low vacuum field. ADVANTAGE - The on-chip miniature electron source has replace the conventional filament, small in size, can expand the upper limit of vacuum degree of the ionization vacuum sensor. DETAILED DESCRIPTION - On-chip micro ionization vacuum sensor comprises micro-electronic source on the chip (1), first insulating layer (2) orderly arranged on one side of the micro-electronic source on the chip, first collecting electrode (4), second insulating layer(6) and second collecting electrode (8). The one side of on-chipmicro-electronic source facing to the first insulating layer is provided with an electronic emitting structure. The first insulating layer has a first through hole (3). The first through hole passes through the first insulating layer. The first collecting electrode has a first mesh (5). The first mesh passes through the first collecting electrode. The second insulating layer has a second through hole (7). The second through hole passes through the second insulating layer. The second collecting electrode is provided with a second mesh. The second mesh passes through the second collecting electrode, the first through hole and the first mesh. The second through hole and the second mesh are connected with each other. The electron emitted by the electron emitting structure passes through the first through hole and the first mesh and enters the second through hole. The gas molecule entering the second through hole through the second mesh collides, ionizing the gas molecule into ion. The first collecting electrode is used for collecting electronic, and generating electronic current. The second collecting electrode is used for collecting ions, and generating ion current, and calculating the vacuum degree of the environment of the micro-ionization vacuum sensor on the chip with specific the electronic current and the ion current. An INDEPENDENT CLAIM is included for a method manufacturing on-chip microionization vacuum sensor, which involves: (A) using micro-nano processing technique to prepare micro-electronic source on chip; (B) using the bonding process to fix the first insulating layer, first collecting electrode, second insulating layer and second collecting electrode on the micro-electronic source on the chip, where the first insulating layer has a first through hole, the first through hole passes by the first insulating layer, where the first collecting electrode has a first mesh, the first mesh passes through the first collecting electrode, the second insulating layer has asecond through hole, the second through hole passes through the second insulating layer; (C) providing the second collecting electrode with a second mesh, where the second mesh passes through the second collecting electrode; and (D) connecting the first through hole, first mesh, second through hole and the second mesh with each other. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of on-chip micro ionization vacuum sensor. Micro electronic source on the chip (1) First insulating layer (2) First through hole (3) First collecting electrode (4) First mesh (5) Second insulating layer (6) Second through hole (7) Second collecting electrode (8)