▎ 摘　　要

NOVELTY - Method for growing gallium nitride and graphene-based magnetron sputtering aluminum nitride involves growing monolayer graphene on a metal substrate, immersing resultant substrate in a mixed solution of ferric chloride and hydrochloric acid for 12 hours, removing the substrate, transferring the monolayer graphene on the surface of alpha -aluminum oxide substrate, magnetron sputtering aluminum nitride thin film on the graphene-covered aluminum oxide substrate, heat-treating, growing aluminum nitride transition layer on the heat-treated substrate, and growing gallium nitride layer. USE - Method for growing gallium nitride and graphene-based magnetron sputtering aluminum nitride during manufacture of device. ADVANTAGE - The method enables formation of gallium nitride and graphene-based magnetron sputtering aluminum nitride with high quality. DETAILED DESCRIPTION - Method for growing gallium nitride and graphene-based magnetron sputtering aluminum nitride involves growing monolayer graphene on a metal substrate using a chemical vapor deposition method, immersing resultant substrate in a mixed solution of 1M ferric chloride and 2M hydrochloric acid for 12 hours, removing the substrate, transferring the monolayer graphene on the surface of alpha -aluminum oxide substrate, placing obtained graphene-covered aluminum oxide substrate in a magnetron sputtering system, maintaining reaction chamber pressure of 1 Pa, introducing nitrogen and argon for 5 minutes, adding 5N purity aluminum as a target, sputtering aluminum nitride thin film on the graphene-covered aluminum oxide substrate using radio-frequency magnetron sputtering process, placing resultant substrate in a metal organic chemical vapor deposition (MOCVD) reaction chamber, introducing mixed gas of hydrogen and ammonia for 5 minutes, heating the reaction chamber at 600 degrees C for 20 minutes, maintaining the reaction chamber pressure at 40 torr, increasing temperature to 1050 degrees C degrees C, adding hydrogen, ammonia and aluminum sources, growing aluminum nitride transition layer on the heat-treated substrate by a chemical vapor deposition method, obtaining an aluminum nitride substrate, reducing reaction chamber pressure to 20 torr and temperature to 1000 degrees C, adding hydrogen, ammonia and gallium sources, growing gallium nitride epitaxial layer on the aluminum nitride substrate by chemical vapor deposition method, obtaining low V-III ratio gallium nitride substrate, maintaining the reaction chamber temperature at 1000 degrees C, increasing pressure of the reaction chamber to 40 torr, adding hydrogen, ammonia and gallium sources, growing gallium nitride epitaxial layer on the low V-III ratio gallium nitride substrate by chemical vapor deposition method, obtaining high V-III ratio gallium nitride substrate, reducing the temperature of the reaction chamber to room temperature and removing the sample.