▎ 摘　　要

NOVELTY - A metal thin film is formed on graphene, and liquid phase carrier is disposed on the graphene. The carrier is hardened, and carrier and graphene from the metal thin film are separated. Thus, graphene is post-treated. USE - Post-treating method of graphene (claimed) used for field effect transistor, biosensor, nanocomposite and quantum device. ADVANTAGE - The method efficiently provides post-treated grapheme having excellent surface resistance, conductivity and electrical characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of graphene, which involves transporting (S100) the metal thin film to graphene forming apparatus using a reel, forming graphene (S120) on metal thin film, disposing (S130) liquid phase carrier, hardening (S140) carrier, separating (S150) carrier and graphene from metal thin film, and forming (S160) protecting film on graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of manufacture of graphene. Transporting metal thin film (S100) Washing (S110) Forming graphene (S120) Carrier dispersing process (S130) Hardening process (S140) Removing metal thin film (S150) Forming preventive film (S160) Removing carrier (S170)