▎ 摘　　要

NOVELTY - The method involves preparing an aluminum-nitride crystal by performing physical gas phase transmission process (S10). (S20) A bottom electrode is prepared, deposited and formed on a surface of the substrate. (S30) The aluminum-nitride crystal is placed on the bottom electrode. (S40) Prepared graphene is transferred to the aluminum-nitride crystal. (S50) A top electrode is deposited on an upper region of the graphene. Temperature range of the prepared aluminum-nitride crystal is about 1900-2300 degrees centigrade. USE - Method for preparing a VUV photoelectric detector. Uses included but are not limited to fire detection, missile tracking, environment monitoring, biological detection, UV astronomy, UV communication, military, civil and scientific research fields. ADVANTAGE - The method enables preparing the vacuum ultraviolet photoelectric detector based on the aluminum nitride crystal that is prepared by physical gas phase transmission method, so that manufacturing vacuum ultraviolet detector process does not need to carry the substrate of aluminum-nitride crystal growth, thus reducing the production cost, increasing the selectivity of the bottom electrode and graphene as transparent window, and increasing the photosensitive area, and hence increasing the performance of the detector. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a vacuum UV (VUV) photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing a VUV photoelectric detector. (Drawing includes non-English language text). S10Step for preparing an aluminum-nitride crystal by performing physical gas phase transmission process S20Step for preparing, depositing and forming a bottom electrode on a surface of the substrate S30Step for placing the aluminum-nitride crystal on the bottom electrode S40Step for transferring prepared graphene to the aluminum-nitride crystal S50Step for depositing a top electrode on an upper region of the graphene