▎ 摘　　要

NOVELTY - The method involves providing (S1) a substrate to be placed in a double temperature area system. A source system is placed in the double temperature area to heat a deposited precursor layer to form the nitrogen-doped graphene on the surface of substrate. The gas carbon source is introduced (S2) under the condition of high temperature so as to form a nitrogen-doped graphene film by carbon deposition. USE - Method for preparing nitrogen-doped graphene film. ADVANTAGE - The N-type nitrogen-doped graphene film can be formed with less defects. The electrical performance of the nitrogen-doped graphene film is excellent. The doping concentration of the nitrogen doped graphene film quality is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the preparation method of nitrogen doped graphene film. (Drawing includes non-English language text) Step for providing the substrate to be placed in double temperature area system and placing the source system in the double temperature area to heat the deposited precursor layer to form the nitrogen-doped graphene on the surface of substrate (S1) Step for introducing the gas carbon source under the condition of high temperature so as to form the nitrogen-doped graphene film by carbon deposition (S2)