• 专利标题:   Preparation of composite material used for hole transport layer of quantum dot light-emitting diode, involves adding graphene oxide to molybdenum oxide solution, obtaining precursor solution, and annealing.
  • 专利号:   CN110752302-A, CN110752302-B
  • 发明人:   HE S, WU L, WU J
  • 专利权人:   TCL CORP, TCL TECHNOLOGY GROUP CORP
  • 国际专利分类:   H01L051/50, H01L051/56
  • 专利详细信息:   CN110752302-A 04 Feb 2020 H01L-051/50 202017 Pages: 9 Chinese
  • 申请详细信息:   CN110752302-A CN10819307 24 Jul 2018
  • 优先权号:   CN10819307

▎ 摘  要

NOVELTY - Preparation of composite material involves providing graphene oxide and molybdenum oxide solution, adding graphene oxide to molybdenum oxide solution, obtaining a precursor solution, and annealing. USE - Preparation of composite material used for hole transport layer of quantum dot light-emitting diode (all claimed). ADVANTAGE - The method enables preparation of composite material having excellent hole transporting material. The quantum dot light-emitting diode using the composite material has reduced contact resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) composite material, which comprises molybdenum oxide nanoparticles and graphene oxide dispersed between the nanoparticles; and (2) quantum dot light-emitting diode, which comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode. The quantum dot light-emitting diode further has a hole transport layer arranged between the anode and the quantum dot light-emitting layer. The hole transport layer contains the composite material.