▎ 摘　　要

NOVELTY - Preparing gallium nitride film comprises (i) drying pre-processed substrate with high-purity nitrogen, adding into a vacuum reaction chamber to heat to preset temperature, and stabilizing the first preset time, using the remote ammonia plasma of 300-3000 W power to process second preset time for substrate functionalization; (ii) setting related growth parameters of the gallium nitride film; (iii) alternately pulsing remote ammonia plasma and gallium organic metal precursor source in the vacuum reaction cavity, depositing gallium nitride film on the substrate, and stopping deposition until the gallium nitride film deposited by the substrate reaches the preset process condition; and (iv) introducing the high-purity nitrogen into the vacuum reaction chamber until room temperature, where the purity of the high purity nitrogen is greater than 99.9% USE - The method is useful for preparing gallium nitride film used for blue light emitting diode, solar cell, high temperature high power device, high frequency microwave device and metal-oxide semiconductor field effect transistor device and preparing photoelectric device. ADVANTAGE - The method improves the atomic layer deposition technology, increases the preprocessing step, improves the ammonia plasma, prepares the gallium nitride film with less defect and high three-dimensional uniformity, and improves the photoelectric performance of the gallium nitride film and reduces the dislocation defect caused by heat mismatch of gallium nitride and heterogeneous substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a gallium nitride film. DESCRIPTION OF DRAWING(S) - The drawing shows a preparation method of gallium nitride film. (Drawing includes non-English language text).