▎ 摘　　要

NOVELTY - Growing deep UV LED epitaxial structure involves: providing (S11) a graphite disc, and depositing an isolation layer, which is a two-dimensional atomic crystal material layer on a surface of graphite disc; growing (S12) an epitaxial structure of a deep UV LED on the surface of the isolation layer; and adhering (S13) the residue on the surface of the isolation layer to the graphite disc by using an adhesive tape. USE - The method is useful for growing deep UV LED epitaxial structure used in optoelectronic manufacturing process. ADVANTAGE - The method effectively cleans the residue of the graphite disc surface after growing the epitaxial structure, improves the service life of the graphite disc, and reduces the cleaning cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the graphite disc for a metal organic chemical vapor deposition equipment. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the method for growing epitaxial structure of deep UV LED. (Drawing includes non-English language text). Providing graphite disc (S11) Growing epitaxial structure of deep UV LED on the surface of the isolation layer (S12) Adhering residue on the surface of the isolation layer to the graphite disc (S13)