▎ 摘　　要

NOVELTY - The gallium nitride-based schottky diode has an n-type gallium nitride film, a metal layer and a graphene that are connected with each other. The n-type gallium nitride film is placed between the graphene and the metal layer. The graphene is used as a bottom electrode and a top electrode of the gallium nitride-based schottky diode. USE - Schottky diode for use in a gallium nitride-based schottky beta-nuclear battery (claimed) used in an aerospace field i.e. deep space detection field. ADVANTAGE - The n-type gallium nitride film in the gallium nitride-based schottky diode is obtained by epitaxial growth technology, so that the nitride film is ultra-thin, and the prepared Schottky-based diode can have thin thickness. The high quality self-supporting gallium nitride film can be quickly obtained by mechanical cutting compared with a sapphire substrate. The graphene is used as an electrode so as to reduce blocking effect of a radioactive source particle and improve transmission effect of an electrode layer to electron-hole pair. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a gallium nitride-based schottky diode preparation method; (2) a gallium nitride-based schottky beta-nuclear battery. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram illustrating a preparation process of a gallium nitride-based schottky beta-nuclear battery . (Drawing includes non-English language text).