▎ 摘　　要

NOVELTY - The electronic apparatus such as transistor (1) has hole portions (4c) for scattering edge portions (4a,4b) of graphene element (4) respectively, with deficient carbon atoms. The metals are connected with the edge portions of graphene element. The hole portions are formed with zigzag ends. The metals are connected with the source electrode (5a) and drain electrode (5b) respectively. An insulating film (3) is stacked between edge portions of the graphene element. A gate electrode is stacked in the opposite side of the graphene element. USE - Electronic apparatus such as transistor. ADVANTAGE - The increase of the contact resistance between graphene element and metal is suppressed, and the switching characteristic of the transistor is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing electronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the transistor. Transistor (1) Insulating film (3) Graphene element (4) Edge portions of graphene element (4a,4b) Hole portion (4c) Source electrode (5a) Drain electrode (5b)