▎ 摘　　要

NOVELTY - The film has a graphene layer (2) that is arranged on the surface of a silicon substrate (1), and an energy storage film layer (3) is arranged on the surface of the graphene layer. The graphene layer is single-layer graphene or multi-layer graphene. The number of graphene layers is 1-10 in the graphene layer. The energy storage film is one or more of ferroelectric film, relaxor ferroelectric film and antiferroelectric film. The energy storage film layer adopts a single-layer energy storage film or a multi-layer energy storage film. USE - Graphene-modified silicon integrated energy storage film. ADVANTAGE - The excellent thermal conductivity of the graphene layer is used to enhance the heat dissipation of the energy storage film and effectively avoid thermal runaway, and significantly increasing the energy storage density of the energy storage film to facilitate the application of the energy storage film in high temperature environments. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing graphene-modified silicon integrated energy storage film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a graphene-modified silicon integrated energy storage film. Silicon substrate (1) Graphene layer (2) Energy storage film layer (3)