• 专利标题:   Method for manufacturing large-area single crystal graphene layer by chemical surface treatment of growth substrate through modification of substrate, involves preparing metal substrate of surface that provides nucleation site of graphene.
  • 专利号:   KR2020133469-A
  • 发明人:   LEE G H, LEE J
  • 专利权人:   UNIV YONSEI IND ACADEMIC COOP FOUND
  • 国际专利分类:   H01L021/02, H01L021/285, H01L021/324
  • 专利详细信息:   KR2020133469-A 30 Nov 2020 H01L-021/02 202099 Pages: 14
  • 申请详细信息:   KR2020133469-A KR058690 20 May 2019
  • 优先权号:   KR058690

▎ 摘  要

NOVELTY - The method involves preparing a metal substrate having a surface that provides a nucleation site of graphene. A treatment solution is provided by an organic solvent, an acidic solution, or a mixed solution. The surface of the metal substrate modify the nucleation site through a treatment for controlling roughness of the surface and removing foreign substances. A graphene layer is formed on the surface of the metal substrate by chemical vapor deposition. The organic solvent comprises methanol, ethanol, isopropyl alcohol, acetone, or a mixture. The acidic solvent is a nitric acid solution and a sulfuric acid solution. The treatment solution is dip coating, spin coating, spray coating, flow coating, roller coating, or paint brushing. The treatment solution or residual by-products is removed on the surface after modifying the nucleation site. A metal substrate is a polycrystalline metal thin film. USE - Method for manufacturing a large-area single crystal graphene layer by chemical surface treatment of a growth substrate through modification of a substrate. ADVANTAGE - The high-pressure gas spraying method clean the entire surface of an object because the cost is low and the time required to remove foreign substances is short, and the deposition of the graphene layer is performed more efficiently by the surface modification. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the method. (Drawing includes non-English language text).