• 专利标题:   Dual-side CIGS thin film photovoltaic cell, has transparent electric conduction films covered with graphene thin film through physical chemical absorbing treatment, and main body provided with P-type photovoltaic absorption layer thin film.
  • 专利号:   CN203721741-U
  • 发明人:   WANG Q, YU H, LAI B
  • 专利权人:   NANJING HANERGY PV CO LTD
  • 国际专利分类:   H01L031/0224, H01L031/0749
  • 专利详细信息:   CN203721741-U 16 Jul 2014 H01L-031/0224 201467 Pages: 6 Chinese
  • 申请详细信息:   CN203721741-U CN20104766 07 Mar 2014
  • 优先权号:   CN20104766

▎ 摘  要

NOVELTY - This utility new type claims a one double-side thin film photovoltaic cell, include from lower to upper in turn set with a substrate, first transparent electric conduction film, P type photovoltaic absorption layer thin film, N type cadmium sulphide film layer and second transparent electric conduction film, a substrate is high molecular thin film material, a first transparent electric conduction film and second transparent electric conduction film is graphene thin film through physical chemical absorbing method of treatment. This utility new type using a modified graphene thin film new material to replace a transparent electric conduction film and metal electrode layer in the conventional CIGS thin film photovoltaic cell, through double-side high light transmittance, high conductivity of graphene thin film, valid improve photoelectric conversion efficiency of thin film photovoltaic cell.