▎ 摘　　要

NOVELTY - The structure (300) has two conductive features (312A) that are disposed on a first dielectric layer (310). An etching stopping layer (314) is disposed on the first dielectric layer. A second dielectric layer (316) is disposed on the etching stopping layer. A third conductive feature is disposed in the second dielectric layer and the etching stopping layer. A first conductive layer (320) is provided with a two-dimensional material. A fourth conductive feature is disposed in the second dielectric layer and the etching stopping layer. The third conductive feature and the fourth conductive feature are provided with a different number of layers. The first conductive layer is provided with graphene/a transition metal disulfide. USE - Semiconductor interconnecting structure for semiconductor device. ADVANTAGE - The interconnection structure can be easily and economically manufactured with high reliability and improved performance and without any damage, and has excellent electrical characteristics and thermal stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor interconnecting method for semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional side view of the semiconductor interconnecting structure for semiconductor device. 300Interconnection structure 308AActive region 308SSealing ring region 310First dielectric layer 312AConductive feature 312SMore conductive features 314Etching stopping layer 316Second dielectric layer 318AOpenings 320First conductive layer