▎ 摘　　要

NOVELTY - Manufacture of ultra-low absorption sapphire involves taking aluminum oxide and the substance that reduces the absorption coefficient of sapphire, and doping the substance that reduces the absorption coefficient of sapphire into aluminum oxide to form a mixture, placing the mixture into the crucible, vacuumizing and heating up the material, necking and seeding, shouldering, performing isometric growth and cooling and annealing to take sapphire crystal. USE - Manufacture of ultra-low absorption sapphire (claimed). ADVANTAGE - The method provides the sapphire with reduced absorption coefficient. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the ultra-low absorption sapphire, which is made of aluminum oxide and the material that reduces sapphire absorption coefficient. The material is preferably graphene, silicon, sodium and lithium. The doping amount of the graphene is 0.5-3 ppm. The doping amount of silicon is 0.5-3 ppm. The doping amount of sodium is 0.5-3 ppm. The doping amount lithium is 0.5-3 ppm.