▎ 摘　　要

NOVELTY - A light-emitting diode chip comprises a substrate, an undoped aluminum nitride buffer layer, an undoped gallium nitride layer, N-type gallium nitride layer, a multi-quantum well layer, a P-type aluminum-gallium nitride layer, a P-type gallium nitride layer and a graphene film layer. The multi-quantum well layer includes an indium-gallium nitride layer and a gallium nitride layer. The light-emitting diode chip further includes titanium dioxide nanorods provided on the graphene film layer in an array. USE - Light-emitting diode chip (claimed). ADVANTAGE - The light-emitting diode chip has high luminous efficiency, and is not easy to break. DETAILED DESCRIPTION - A light-emitting diode chip comprises a substrate, and an undoped aluminum nitride buffer layer, an undoped gallium nitride layer, N-type gallium nitride layer, a multi-quantum well layer, a P-type aluminum-gallium nitride (AlyGa1-yN, where y is more than 0.1 and less than 0.5) layer, a P-type gallium nitride layer and a graphene film layer, which laminated on the substrate in order. The multi-quantum well layer includes an indium-gallium nitride layer and a gallium nitride layer, which are alternately laminated. The graphene film layer is provided with a groove extending to the N-type gallium nitride layer. An N-type electrode is provided on the N-type gallium nitride layer. The P-type electrode is provided on the graphene film layer. The light-emitting diode chip further includes titanium dioxide nanorods provided on the graphene film layer in an array. An INDEPENDENT CLAIM is included for manufacture of light-emitting diode chip.