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  • 专利标题:   Formation of structure, involves applying photoresist layer and graphene layer on substrate, and applying light through mask including pattern to graphene layer to form pattern on photoresist layer through graphene layer.
  • 专利号:   WO2012044286-A1, US2012263921-A1, US8512936-B2, CN103124927-A, US2013309462-A1, US8773636-B2, CN103124927-B
  • 发明人:   YAGER T A, MILLER S A
  • 专利权人:   EMPIRE TECHNOLOGY DEV LLC, YAGER T A, MILLER S A, ISLAND GIANT DEV LLP
  • 国际专利分类:   G03F007/00, B32B003/30, B82Y030/00, B82Y040/00, G03B027/42, G03F007/20, G03F007/26, G03B027/52, G03F007/38
  • 专利详细信息:   WO2012044286-A1 05 Apr 2012 G03F-007/00 201227 Pages: 25 English
  • 申请详细信息:   WO2012044286-A1 WOUS050668 29 Sep 2010
  • 优先权号:   CN80069331, WOUS050668, US999141, US950923

▎ 摘　　要

NOVELTY - A photoresist layer is applied (S2) on a substrate, a graphene layer is applied (S4) on the photoresist layer, and light is applied (S6) through a mask to the graphene layer to form a structure. The mask includes a pattern. The application of light forms the pattern on the photoresist layer through the graphene layer. USE - Formation of structure (claimed). ADVANTAGE - The method forms graphene layer which effectively enhances a contrast of images patterned on photoresist. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) structure; and (2) system effective to form structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram of the optical lithography method using a graphene contrast enhancement layer. Optical lithography (200) Application of photoresist layer (S2) Application of graphene layer (S4) Application of light (S6)