• 专利标题:   Affinity nanosensor useful for detecting low charge, low molecular weight molecules comprises solution gated field effect transistor, and electrical double layer at interface of graphene and solution comprising gate capacitor.
  • 专利号:   WO2016205190-A1
  • 发明人:   LIN Q, ZHU Y, SHANG J, ZHANG Z
  • 专利权人:   UNIV COLUMBIA NEW YORK
  • 国际专利分类:   A61B005/145, C12M001/34, G01N033/543, G01N033/66
  • 专利详细信息:   WO2016205190-A1 22 Dec 2016 G01N-033/66 201707 Pages: 84 English
  • 申请详细信息:   WO2016205190-A1 WOUS037362 14 Jun 2016
  • 优先权号:   US180484P, US188281P

▎ 摘  要

NOVELTY - Affinity nanosensor comprises (a) solution-gated field effect transistor containing comprising (i) silicon substrate, (ii) source electrode arranged on silicon substrate, (iii) drain electrode arranged on the silicon substrate, (iv) graphene functionalized with synthetic polymer monolayer arranged between source electrode and drain electrode on silicon substrate, and (v) reference electrode arranged between source and drain electrodes, and (b) electrical double layer at interface of graphene and solution comprising gate capacitor. USE - The affinity nanosensor is useful for detecting low-charge, low-molecular-weight molecules. The method is useful for fabricating the affinity nanosensor (all claimed). ADVANTAGE - The affinity nanosensor enables to detect low-charge, low-molecular-weight molecules with high accuracy and sensitive. The affinity nanosensor has high stability. DETAILED DESCRIPTION - Affinity nanosensor comprises (a) solution-gated field effect transistor comprising (i) silicon substrate, (ii) source electrode arranged on silicon substrate, (iii) drain electrode arranged on the silicon substrate, (iv) graphene functionalized with synthetic polymer monolayer arranged between source electrode and drain electrode on silicon substrate, the functionalized graphene comprises conducting channel of solution-based field effect transistor, and synthetic polymer monolayer being responsive to a first analyte, and (v) reference electrode arranged between source and drain electrodes, and (b) electrical double layer at interface of graphene and solution comprising gate capacitor. An INDEPENDENT CLAIM is included for method for fabricating an affinity nanosensor.