▎ 摘　　要

NOVELTY - Formation of material film by providing a non-photosensitive mask (12) on a substrate (10), forming a material film on the partial region of the substrate using a sputtering process, removing the non- photosensitive mask from the substrate, and heat-treating the substrate and the material film under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering involves radio frequency (RF) magnetron sputtering. The substrate includes sapphire substrate, silicon oxide substrate, nanocrystalline graphene substrate, or sulfide substrate. USE - The method is useful for forming a material film e.g. amorphous material film and polycrystalline material film, used in an electronic device. ADVANTAGE - The method is capable of limiting and/or preventing the deterioration in properties of a material in the formation process. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view and three-dimensional view of the method of forming the material film. 10Substrate 12Mask