▎ 摘　　要

NOVELTY - Synthesis of thin film involves providing a buffer layer to stack on a substrate, utilizing a tube or rod to coil substrate and buffer layer stack to a cylindrical shape, positioning coiled cylinder in a processing chamber (302), forming a thin film on a surface of the substrate by chemical vapor deposition, and unloading the substrate from coiled cylinder. USE - Synthesis of thin film e.g. graphene film (claimed) used for electronic application, energy application and optoelectronic application. Can also be used for forming boron-nitride film. ADVANTAGE - The method enables synthesis of thin film having large area and enhanced width dimension, using chemical vapor deposition apparatus without gas inlet. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method for supporting substrate in processing chamber for depositing chemical vapor deposition coating; and (2) apparatus for processing a substrate. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of explaining deposition of graphene thin film using pre-embedded buffer layer as reactant source in reactor chamber of chemical vapor deposition device without gas inlet. Cylinder (100) Processing chamber (302) Chemical vapor deposition furnace (303) Gas outlet (305)