• 专利标题:   Photodetector has two-dimensional N-type semiconductor sheet whose one end is away from graphene sheet and is electrically connected to drain electrode.
  • 专利号:   CN111987177-A
  • 发明人:   ZHANG H, KANG L, WANG H, ZHANG J
  • 专利权人:   UNIV SHENZHEN
  • 国际专利分类:   B82Y030/00, B82Y040/00, H01L031/0352, H01L031/105, H01L031/18
  • 专利详细信息:   CN111987177-A 24 Nov 2020 H01L-031/0352 202003 Pages: 8 Chinese
  • 申请详细信息:   CN111987177-A CN10905366 01 Sep 2020
  • 优先权号:   CN10905366

▎ 摘  要

NOVELTY - The photodetector has a substrate (1), a source electrode (2), a drain electrode (3), a two-dimensional P-type semiconductor sheet (4), a two-dimensional N-type semiconductor sheet (6) and a graphene sheet (5) provided on the substrate. A graphene sheet is arranged between the two-dimensional P-type semiconductor sheet and the two-dimensional N-type semiconductor sheet and is passed between the two-dimensional P-type semiconductor sheet and the two-dimensional N-type semiconductor sheet. One end of the two-dimensional P-type semiconductor sheet is away from the graphene sheet and is electrically connected to the source electrode. One end of the two-dimensional N-type semiconductor sheet is away from the graphene sheet and is electrically connected to the drain electrode. USE - Photodetector. ADVANTAGE - The photodetector effectively improves the wide-band light absorption efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photodetector. Substrate (1) Source electrode (2) Drain electrode (3) Two-dimensional P-type semiconductor sheet (4) Graphene sheet (5) Two-dimensional N-type semiconductor sheet (6)