▎ 摘　　要

NOVELTY - The method involves providing a carrier wafer (110) and a silicon carbide wafer (100). A side (101) of the silicon carbide wafer is arranged with the carrier wafer. The silicon carbide wafer is arranged with a silicon carbide layer, which is arranged at the carrier wafer. The silicon carbide wafer is provided with a silicon carbide wafer remaining part. The silicon carbide layer is bonded with the carrier wafer during a splitting process for forming a graphene material on the silicon carbide layer. The carrier wafer is provided with two sides (111, 112). USE - Method for manufacturing a semiconductor component. ADVANTAGE - The method enables providing the carrier wafer and the silicon carbide wafer, and bonding the silicon carbide layer with the carrier wafer during the splitting process for forming the graphene material on the carbide layer, so that manufacturing cost of a semiconductor component can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor component. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor component. Silicon carbide wafer (100) Side of silicon carbide wafer (101) Carrier wafer (110) Sides of carrier wafer (111, 112)