• 专利标题:   Semiconductor-based Fenton catalyst with multi-channel charge transfer useful in wastewater treatment, prepared by e.g. taking ferric chloride hexahydrate, uniformly growing ferric oxide quantum dots on the surface of composite prepared by graphitic carbon nitride and reducing graphene oxide.
  • 专利号:   CN114100663-A
  • 发明人:   HUANG C, DUAN Y, ZHENG M, XIA H
  • 专利权人:   CHEM CHEM ENG GUANGDONG LAB
  • 国际专利分类:   B01J023/745, B01J027/24, C02F001/30, C02F001/72, C02F101/34, C02F101/38
  • 专利详细信息:   CN114100663-A 01 Mar 2022 B01J-027/24 202255 Chinese
  • 申请详细信息:   CN114100663-A CN11457098 01 Dec 2021
  • 优先权号:   CN11457098

▎ 摘  要

NOVELTY - Semiconductor-based Fenton catalyst with multi-channel charge transfer is claimed. The semiconductor-based Fenton catalyst with multi-channel charge transfer is prepared by taking ferric chloride hexahydrate (FeCl3.6H2O) as iron source, uniformly growing ferric oxide (Fe2O3) quantum dots on the surface of composite prepared by graphitic carbon nitride (g-C3N4) and reducing graphene oxide. USE - The semiconductor-based Fenton catalyst with multi-channel charge transfer is useful in wastewater treatment (claimed). ADVANTAGE - The semiconductor-based Fenton catalyst with multi-channel charge transfer: improves the catalytic activity of existing photo-Fenton catalysts; promotes Fe(III)/Fe(II) conversion and improve the catalytic degradation efficiency of organic pollutants. The method: utilizes cheap raw materials; is simple and easy to prepare; and has simple and fast process.