• 专利标题:   Manufacture of three-dimensional graphene nanostructure for electrode, involves forming graphene nano-cup spacer by mixing graphene, titanium catalyst precursor and ionic liquid, irradiating microwave and etching with acidic solution.
  • 专利号:   KR2015114807-A, KR1573884-B1
  • 发明人:   PARK H, SRIDHAR V
  • 专利权人:   UNIV PUSAN NAT IND COOP FOUND
  • 国际专利分类:   B82B001/00, B82B003/00, C01B031/04
  • 专利详细信息:   KR2015114807-A 13 Oct 2015 B82B-003/00 201582 Pages: 16
  • 申请详细信息:   KR2015114807-A KR039462 02 Apr 2014
  • 优先权号:   KR039462

▎ 摘  要

NOVELTY - Manufacture of three-dimensional graphene nanostructure involves forming graphene nano-cup spacer by mixing graphene, titanium catalyst precursor and ionic liquid, irradiating the microwave to the mixture, drying the mixture, and etching powder particles with acidic solution. USE - Manufacture of three-dimensional graphene nanostructure (claimed) used for electrode of capacitor. ADVANTAGE - The method enables efficient manufacture of three-dimensional graphene nanostructure with excellent electrochemical characteristics and high electrical capacity.