• 专利标题:   Preparing reduced graphene oxide/indium sulfide composite material comprises e.g. ultra-sonicating oxidized graphene in deionized water to form a dispersion solution, adding indium chloride and thioacetyl and continuing ultrasound.
  • 专利号:   CN106129351-A
  • 发明人:   HE D, LU J, ZHANG Y, YIN G, GE M, JIN C
  • 专利权人:   NAT ENG RES CENT NANOTECHNOLOGY
  • 国际专利分类:   B82Y030/00, H01M010/052, H01M004/36, H01M004/58, H01M004/587
  • 专利详细信息:   CN106129351-A 16 Nov 2016 H01M-004/36 201701 Pages: 5 Chinese
  • 申请详细信息:   CN106129351-A CN10516561 04 Jul 2016
  • 优先权号:   CN10516561

▎ 摘  要

NOVELTY - Preparing reduced graphene oxide/indium sulfide composite material comprises e.g. (i) ultra-sonicating oxidized graphene in deionized water to form a dispersion solution;(ii) adding indium chloride and thioacetyl in step (i), and continuing ultrasound; (iii) transferring the ultrasonic mixed solution in the step (ii) into an autoclave, sealing, then cooling to room temperature, rinsing with ethanol and deionized water, drying under vacuum oven at; and (iv) subjecting the product obtained in step (iii) to high-temperature annealing in an nitrogen atmosphere, to obtain the final product. USE - The method useful in preparing reduced graphene oxide/indium sulfide composite material (claimed). ADVANTAGE - Reduced graphene oxide/indium sulfide composite material has good electrochemical performance, and has simple preparation process. DETAILED DESCRIPTION - Preparing reduced graphene oxide/indium sulfide composite material comprises (i) ultra-sonicating oxidized graphene in deionized water for 1 hour to form a dispersion solution;(ii) adding indium chloride and thioacetyl in step (i), and continuing ultrasound for 1 hour; (iii) transferring the ultrasonic mixed solution in the step (ii) into an autoclave, sealing at 120 degrees C, keeping for 24 hours, then cooling to room temperature, rinsing with ethanol and deionized water, drying under vacuum oven at 70 degrees C for 6 hours; and (iv) subjecting the product obtained in step (iii) to high-temperature annealing in an nitrogen atmosphere, to obtain the final product.