• 专利标题:   Graphene quantum dot-based sensor used in system for measuring moisture content in environment e.g. soil, has p-type substrate, oxide layer, interdigitated electrode, contact pad, and graphene quantum dots deposited between electrodes.
  • 专利号:   IN201502796-I3
  • 发明人:   ASLAM M, KALITA H K, BAGHINI M S, PALAPARTHY V S
  • 专利权人:   INDIAN INST TECHNOLOGY BOMBAY
  • 国际专利分类:   B82Y020/00
  • 专利详细信息:   IN201502796-I3 12 May 2017 B82Y-020/00 201736 Pages: 34 English
  • 申请详细信息:   IN201502796-I3 INMU02796 23 Jul 2015
  • 优先权号:   INMU02796

▎ 摘  要

NOVELTY - A graphene quantum dot-based sensor (100) consists of a p-type substrate (101), an oxide layer (102) grown on the p-type substrate by thermal oxidation, an interdigitated electrode (103) including connecting terminals (105), provided on the oxide layer, a contact pad (104) provided on the electrode interdigitated for bonding with printed circuit board, and graphene quantum dots (106) deposited between the interdigitated electrodes by drop-casting or spin-coating processes. USE - Graphene quantum dot-based sensor is used in system for measuring moisture content in environment e.g. soil (all claimed). ADVANTAGE - The graphene quantum dot-based sensor has excellent stability and durability, and effectively and economically measures moisture content in environment, with reduced power consumption in short period of time. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of graphene quantum dot-based sensor; and (2) system for measuring moisture content of soil. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view illustrating manufacture of graphene quantum dot-based sensor. Graphene quantum dot-based sensor (100) P-type substrate (101) Oxide layer (102) Interdigitated electrode (103) Contact pad (104) Connecting terminals (105) Graphene quantum dots (106)