▎ 摘　　要

NOVELTY - The method involves using a high-concentration P-type substrate to replace an N-type substrate. An oxide layer between the alloy junction and the electrode is added, by controlling the concentration and junction depth of the N-type diffusion. The voltage regulation voltage is adjusted and the P-type substrate electrode is placed on an n-type layer. A current blocking layer is connected to a transparent conductive layer. A passivation layer is laminated, after the transparent conductive layer is connected to a light emitting layer, where passivation layer is a graphene layer. A through hole extending to the transparent conductive layer is built into put a p-electrode through, and is connected to the N-type substrate. The aluminum is deposited by a silicon aluminum sheet or evaporation and sintered in a high-temperature sintering furnace to form an aluminum-silicon mutual melt, on the substrate. A finished product is provided as a low-voltage stabilized semiconductor LED. USE - Method for manufacturing low-voltage stabilized semiconductor LED. ADVANTAGE - The method controls concentration and junction depth of N-type diffusion so as to accurately control voltage value of the voltage stabilizing tube.