• 专利标题:   Reducing graphene oxide-polyethylene iminecobaltosic oxide semiconductor composite material has.
  • 专利号:   CN107037085-A, CN107037085-B
  • 发明人:   SHI K, LI L, LIU S
  • 专利权人:   UNIV HEILONGJIANG, UNIV HEILONGJIANG
  • 国际专利分类:   G01N027/04, G01N027/30
  • 专利详细信息:   CN107037085-A 11 Aug 2017 G01N-027/04 201769 Pages: 13 Chinese
  • 申请详细信息:   CN107037085-A CN11044842 24 Nov 2016
  • 优先权号:   CN11044842

▎ 摘  要

NOVELTY - The material has a reduced oxidation graphene, guiding agent and cobalt-containing material. The reducing graphene oxide is set with mass ratio of the guiding agent has specific value. The mass ratio of the cobalt-containing material and the guide agent has specific value. USE - Reducing graphene oxide-polyethylene iminecobaltosic oxide semiconductor composite material. ADVANTAGE - The using method is simple. The generated chemical is polycrystalline material and comprises good crystallinity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of reducing graphene oxide-polyethylene iminecobaltosic oxide semiconductor composite material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the reducing graphene oxide-polyethylene iminecobaltosic oxide semiconductor composite material.