▎ 摘　　要

NOVELTY - The method involves forming a catalyst metal film on a substrate (30), where an insulating film (16,42) is formed on a grapheme metal film, and a metal film (36) is formed on the insulating film. The another metal film is formed on another substrate, where the metal films are joined. The former substrate is removed, where the catalyst metal film is removed after removing the former substrate. The grapheme channel (14a) is formed for patterning the grapheme, where the insulating film, and the graphene are patterned after forming the former metal film. USE - Method for manufacturing a semiconductor device for forming graphene on an insulating film. ADVANTAGE - The grapheme channel is formed for patterning the grapheme, where the insulating film, and the graphene are patterned after forming the former metal film, and hence enables preventing wrinkles and deflection arise in a graphene in the case of transcription and prevents the damage to the graphene by a resist residue in an effective manner, and also increases the bonding surface corresponding to the surface of a substrate, thus bonds the laminated structure on the substrate in a reliable manner. DESCRIPTION OF DRAWING(S) - The drawings show schematic top view and sectional view of a semiconductor device. Grapheme channel (14a) Insulating films (16,42) Substrate (30) Metal film (36) Source electrode (38) Drain electrode (40) Gate electrode (44)