▎ 摘　　要

NOVELTY - Preparing two-dimensional semiconductor device based on focused ion beam irradiation combined with wet transfer involves providing an insulating silicon wafer substrate after cleaning, preparing gold electrode pair of micron size on the insulating silicon wafer substrate by photo-etching technology to obtain the substrate with gold electrode pair, providing cleaned copper foil substrate, using chemical vapor deposition (CVD) method to grow single-layer graphene on the copper foil substrate. The single-layer graphene covers the whole copper foil substrate surface, transferred layer of single-layer transition metal sulfide (TMDCs) on the single-layer graphene, the ion beam accelerator is used to emit low energy ion, bombarded the surface of the partial TMDCs, made the TMDCs surface of the bombarding area generate defect, formed TMDCs/graphene heterojunction on the copper foil substrate. USE - Method for preparing two-dimensional semiconductor device based on focused ion beam irradiation combined with wet transfer used to photoelectric detector, photoelectric diode, self-rotating valley current light generator, photo-diode on-chip communication, illumination, biological sensing and single molecule operation. ADVANTAGE - The method provides a two-dimensional semiconductor device of high integration degree. The method uses ion beam technology to manufacture defect structure on the surface of the 2D material upper layer of the copper foil substrate, using the defect control two- dimensional material carrier doping, and transferring to the insulating silicon chip substrate by wet transfer method to construct a 2D semiconductor devices. The graphene is not damaged by the ion beam. The 2D diode formed by the voltage-current test has unidirectional conductivity, which can realize rectification and logic circuit and so on. DETAILED DESCRIPTION - Preparing two-dimensional semiconductor device based on focused ion beam irradiation combined with wet transfer involves providing an insulating silicon wafer substrate after cleaning, preparing gold electrode pair of micron size on the insulating silicon wafer substrate by photo-etching technology to obtain the substrate with gold electrode pair, providing cleaned copper foil substrate, using chemical vapour deposition (CVD) method to grow single-layer graphene on the copper foil substrate. The single-layer graphene covers the whole copper foil substrate surface, transferred layer of single-layer transition metal sulfide (TMDCs) on the single-layer graphene, the ion beam accelerator is used to emit low energy ion, bombarded the surface of the partial TMDCs, made the TMDCs surface of the bombarding area generate defect, formed TMDCs/graphene heterojunction on the copper foil substrate, placed the copper foil substrate after ion irradiation treatment on the heating table, spin coated PMMA (polymethyl methacrylate) anisole solution on the surface of the single-layer transition metal sulfide, heated to obtain copper foil substrate of TMDCs/graphene heterogeneity solidified with PMMA film, soaked the TDCs/ graphene heterogeneous copper foil substrate solidified with PMMA film in the iron chloride solution, separated and cleaned the TMDCs/ graphene heterogeneous and copper foil substrate solidified with PMMA film, the substrate is used with gold electrode pair to salvage the TMDCs/ graphene heterogeneity of the PMMA film from the water, placed the TMDCs/graphene heterogeneity solidified with PMMA film on the substrate with gold electrode pair, heated to combine the two, then etched the surface of the PMMA film to obtain product.