• 专利标题:   Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.
  • 专利号:   US2015137074-A1, KR2015056372-A, CN104659096-A, US9312368-B2
  • 发明人:   LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M
  • 专利权人:   LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L029/16, H01L029/165, H01L029/267, H01L029/66, H01L029/78, H01L021/336, H01L021/04, H01L029/06
  • 专利详细信息:   US2015137074-A1 21 May 2015 H01L-029/66 201535 Pages: 14 English
  • 申请详细信息:   US2015137074-A1 US334028 17 Jul 2014
  • 优先权号:   KR139321

▎ 摘  要

NOVELTY - The device has a gate electrode (152) for applying an electric field to a graphene channel layer (130). First and second junction contact layers (111, 112) contact portions of the graphene channel layer. The first and second junction contact layers are electrically separated from each other. A substrate (101) comprises insulating material. A separation film (120) is formed between the first junction contact layer and the second junction contact layer. The separation film electrically separates the first junction contact layer from the second junction contact layer. USE - Graphene device i.e. transistor (claimed) i.e. FET. ADVANTAGE - The device includes separated junction contacts, so that off-current characteristics are improved. The device ensures that a graphene is spotlighted as next generation material since the graphene is enhanced with stable and high electrical/mechanical/chemical characteristics and high conductivity, and performs switching between an on state and an off state in an easy manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene device. Substrate (101) Junction contact layers (111, 112) Separation film (120) Graphene channel layer (130) Gate electrode (152)