▎ 摘　　要

NOVELTY - The apparatus has a fermion source nanolayer, a first insulating nanolayer, a fermion transport nanolayer, a second insulating nanolayer, a fermion sink nanolayer, a first contact which applies a first voltage to the fermion source nanolayer. A second contact applies a second voltage to the fermion sink nanolayer, and a transport contact enables an electric current via the fermion transport nanolayer. The fermion source nanolayer forms a resonant quantum tunneling fermion source, and the fermion sink nanolayer forms a resonant quantum tunneling fermion sink. USE - Graphene double-barrier resonant tunneling apparatus. ADVANTAGE - The apparatus operates as an active resistor providing negative absolute resistance in an electrical circuit. Achieves the control of misalignment by determining the crystalline orientation of the graphene layers, and then controlling the alignment between the layers during the dry transfer process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for graphene double-barrier resonant tunneling apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows the bock diagram of an apparatus in a single component. First contact (2) Second contact (4) Transport contact (6) Graphene layers (90,94,98) Hexagonal boron nitride (92,96)