▎ 摘　　要

NOVELTY - The device has a metal interconnect and a graphene interconnect which are stacked to one another. The graphene interconnect is provided on the metal interconnect. A catalyst layer (65) is comprised of cobalt, nickel and iron as a principal ingredient. The metal interconnect is comprised of copper interconnect, a tungsten interconnect, a molybdenum interconnect and a ruthenium interconnect. The graphene interconnect is a multilayered graphene interconnect. USE - Semiconductor device. ADVANTAGE - Since the graphene interconnect is less influenced by the interface inelastic scattering effect, the increasing of electrical resistivity is prevented. Thus, the low-resistance interconnect is achieved in all the interconnect portions with easy use of metal interconnect and graphene interconnect properly. Hence, the stacked interconnect of the metal interconnect and graphene interconnect is formed easily and reliably. The good-quality and uniform graphene layer is formed to grow from the facet of the catalyst layer, such that the good-quality graphene interconnect is obtained. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the semiconductor device. Underlying region (60) Plug (63) Barrier metal film (64) Catalyst layer (65) Graphene layer (66)