• 专利标题:   Apparatus for enabling transfer of e.g. graphene, in thin film transistor, has layer comprising first coefficient of thermal expansion, where first coefficient of thermal expansion is different to second coefficient of thermal expansion.
  • 专利号:   EP3118893-A1, WO2017009526-A1
  • 发明人:   HAQUE S, BOWER C, COTTON D, HAQUE S M
  • 专利权人:   NOKIA TECHNOLOGIES OY
  • 国际专利分类:   H01L021/67, H01L021/677, H01L021/683, H01L021/762
  • 专利详细信息:   EP3118893-A1 18 Jan 2017 H01L-021/67 201708 Pages: 19 English
  • 申请详细信息:   EP3118893-A1 EP176522 13 Jul 2015
  • 优先权号:   EP176522

▎ 摘  要

NOVELTY - The apparatus (1) has a first layer (3) comprising a first coefficient of thermal expansion to support a layer of two dimensional material (7). A second layer (5) is coupled to the first layer, and comprises a second coefficient of thermal expansion. The first coefficient of thermal expansion is different to the second coefficient of thermal expansion such that change in temperature causes deformation of a part of the apparatus and the deformation for enabling transfer of the two dimensional material. USE - Apparatus for enabling transfer of two dimensional materials e.g. graphene, hexagonal boron nitride and molybdenum disulphide, in a microelectronic device e.g. thin film transistor, transducer and sensor, at a roll to roll manufacturing application. ADVANTAGE - The apparatus enables transfer to be carried out at low temperatures without wet processing to reduce risk of damaging or contaminating the two dimensional material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for enabling transfer of two dimensional materials. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of an apparatus for enabling transfer of two dimensional materials. Apparatus for enabling transfer of two dimensional materials (1) Layers (3, 5) Two dimensional material (7)